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  CC1125 swrs120a C revised march 2012 page 1 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. ul tra-high performance rf narrowband transceiver applications social alarms narrowband ultra low power wireless systems with channel spacing down to 4 khz 170 / 315 / 433 / 868 / 915 / 950 mhz ism/srd band systems wireless metering and wireless smart grid (amr and ami) ieee 802.15.4g systems home and building automation wireless alarm and security systems industrial monitoring and control wireless healthcare applications wireless sensor networks and active rfid private mobile radio regulations suitable for systems targeting compliance with: e urope etsi en 300 220 cat. 1 etsi en 54-25 etsi 300 113 for tx us fcc cfr47 part 15, 24, 90, 101 japan arib rcr std-t30, t-67, t-96 key features high performance single chip transceiver o adjacent channel selectivity: 67 db at 6.25 khz offset o blocking performance: 104 db at 10 mhz offset o excellent receiver sensitivity: -129 dbm at 300 bps -123 dbm at 1.2 kbps -110 dbm at 50 kbps o very low phase noise: -115 dbc/hz at 10 khz offset suitable for systems targeting etsi category 1 high spectral efficiency (9.6 kbps in 12.5 khz channel in compliance with fcc narrowbanding mandate) power supply o wide supply voltage range (2.0 v C 3.6 v) o low current consumption: - rx: 2 ma in rx sniff mode - rx: 17 ma peak current in low power mode - rx: 26 ma peak current in high performance mode - tx: 47 ma at +14 dbm o power down: 0.3 a programmable output power up to +16 dbm with 0.4 db step size automatic output power ramping configurable data rates: 0 to 200 kbps supported modulation formats: 2-fsk, 2-gfsk, 4-fsk, 4-gfsk, msk, ook wavematch: advanced digital signal processing for improved sync detect performance rohs compliant 5x5mm qfn 32 package peripherals and support functions enhanced wake-on-radio functionality for automatic low-power receive polling separate 128-byte rx and tx fifos includes functions for antenna diversity support support for re-transmissions support for auto-acknowledge of received packets tcxo support and control, also in power modes automatic clear channel assessment (cca) for listen- before-talk (lbt) systems built in coding gain support for increased range and robustness digital rssi measurement support for seamless integration with the cc1190 for increased range giving up to 3 db improvement in sensitivity and up to +27 dbm output power d escription the c c1125 is a fully integrated single-chip radio transceiver designed for high performance at very low power and low voltage operation in cost effective wireless systems. all filters are integrated, removing the need for costly external saw and if filters. the device is mainly intended for the ism (industrial, scientific and medical) and srd (short range device) frequency bands at 164- 192 mhz, 274-320 mhz, 410-480 mhz and 820-960 mhz. the CC1125 provides extensive hardware support for packet handling, data buffering, burst transmissions, clear channel assessment, link quality indication and wake-on- radio. the CC1125 main operating parameters can be controlled via an spi interface. in a typical system, the CC1125 will be used together with a microcontroller and only few external passive components.
CC1125 swrs120a C revised march 2012 page 2 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. table of contents 1 electrical specifications ....................................................................................................3 1.1 a bsolute m ax r atings ................................................................................................................3 1.2 g eneral c haracteristics ............................................................................................................3 1.3 rf c haracteristics ......................................................................................................................3 1.4 r egulatory s tandards ...............................................................................................................4 1.5 c urrent c onsumption , s tatic m odes ........................................................................................5 1.6 c urrent c onsumption , t ransmit m odes ...................................................................................5 1.7 c urrent c onsumption , r eceive m odes ......................................................................................6 1.8 r eceive p arameters .....................................................................................................................6 1.9 t ransmit p arameters .................................................................................................................12 1.10 pll p arameters ..........................................................................................................................13 1.11 w ake - up and t iming ...................................................................................................................14 1.12 h igh s peed c rystal o scillator ...............................................................................................14 1.13 h igh s peed c lock i nput (tcxo) ...............................................................................................14 1.14 32 k h z c lock i nput .....................................................................................................................15 1.15 32 k h z rc o scillator ................................................................................................................15 1.16 i/o and r eset ................................................................................................................................15 2 typical performance curves ............................................................................................16 3 pin configuration .....................................................................................................................19 4 block diagram ............................................................................................................................20 4.1 f requency s ynthesizer .............................................................................................................20 4.2 r eceiver .......................................................................................................................................20 4.3 t ransmitter .................................................................................................................................21 4.4 r adio c ontrol and u ser i nterface .........................................................................................21 4.5 e nhanced w ake -o n -r adio ( e wor) .........................................................................................21 4.6 s niff m ode ....................................................................................................................................21 4.7 a ntenna d iversity .....................................................................................................................22 5 typical application circuit...............................................................................................23
CC1125 swrs120a C revised march 2012 page 3 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 electrical specifications all measurements performed on cc1120em_868_915 rev.1.0.1, cc1120em_955 rev.1.2.1, cc1120em_420_470 r ev.1.0.1 or cc1120em_169 rev.1.2 (f xosc = 32 mhz), and CC1125em_868_915 rev.1.1.0, CC1125em_420_470 rev.1.1.0, c c1125em_169 rev.1.1.0, CC1125em-cat1-868 (f xosc = 40 mhz) 1 .1 absolute max ratings parameter min typ max unit condition supply voltage -0.3 3.9 v storage temperature range -40 125 c solder reflow temperature 260 c according to ipc /jedec j-std-020 esd 2000 v hbm esd 500 v cdm moisture sensitivity level msl3 input rf level +10 dbm voltage on any digital pin -0.3 3.9 v voltage on analog pins (including dcpl pins) -0.3 2.0 v 1.2 general characteristics parameter min typ max unit condition voltage supply range 2.0 3.6 v temperature range -40 85 c 1.3 rf characteristics parameter min typ max unit condition 820 960 mhz 410 480 mhz 274 320 mhz please see application note swra398 for more information frequency bands 164 192 mhz 30 hz in 820-960 mhz band 15 hz in 410-480 mhz band frequency resolution 6 hz in 164-192 mhz band 0 200 kbps packet mode datarate 0 100 kbps transparent mode datarate step size 1e-4 bps
CC1125 swrs120a C revised march 2012 page 4 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 .4 regulatory standards performance mode frequency band suitable for compliance with comments 820 C 960 mhz arib t-96 etsi en 300 220 category 1 etsi en 54-25 fcc part 101 fcc part 24 submask d fcc part 15.247 fcc part 15.249 fcc part 90 mask g fcc part 90 mask j performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender such as the cc1190 410 C 480 mhz arib t-67 arib rcr std-30 etsi en 300 220 category 1 fcc part 90 mask d fcc part 90 mask e fcc part 90 mask g performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender high performance mode 164 C 192 mhz etsi en 300 220 category 1 etsi en 300 113 fcc part 90 mask c fcc part 90 mask d fcc part 90 mask e performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 820 C 960 mhz etsi en 300 220 fcc part 15.247 fcc part 15.249 410 C 480 mhz etsi en 300 220 low power mode 164 C 192 mhz etsi en 300 220
CC1125 swrs120a C revised march 2012 page 5 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 .5 current consumption, static modes t a = 25c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition 0.3 1 a power down with retention 0.5 a low-power rc oscillator running xoff mode 170 a crystal oscillator / tcxo disabled idle mode 1.3 ma clock running, system waiting with no radio activity 1.6 current consumption, transmit modes 950 mhz band (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 37 ma tx current consumption 0 dbm 26 ma 868/915 mhz bands (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 40 mhz if nothing else stated parameter min typ max unit condition tx current consumption +14 dbm 47 ma tx current consumption +10 dbm 38 ma 434 mhz band (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 40 mhz if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 51 ma tx current consumption +14 dbm 47 ma tx current consumption +10 dbm 36 ma 170 mhz band (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 40 mhz if nothing else stated parameter min typ max unit condition tx current consumption +15 dbm 56 ma tx current consumption +14 dbm 52 ma tx current consumption +10 dbm 40 ma low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 32 ma
CC1125 swrs120a C revised march 2012 page 6 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 .7 current consumption, receive modes high performance mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition rx wait for sync 1.2 kbps, 4 byte preamble 38.4kbps, 4 byte preamble 2 13.4 ma ma using rx sniff mode, where the receiver wakes up at regular intervals to look for an incoming packet rx peak current, f xosc = 40 mhz 4 33, 868/915 bands 170 mhz band 26 27 ma ma peak current consumption during packet reception at the sensitivity level average current consumption check for data packet every 1 second using wake on radio 15 ua 50 kbps, 5 byte preamble, 32 khz rc oscillator used as sleep timer low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition rx peak current low power rx mode 1.2 kbps 17 ma peak current consumption during packet reception at the sensitivity level 1.8 receive parameters 1 g eneral receive parameters (high performance mode) t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition saturation +10 dbm digital channel filter programmable bandwidth f xosc = 32 mhz f xosc = 40 mhz 2 .8 3.5 200 250 khz khz iip3, normal mode -14 dbm at maximum gain iip3, high linearity mode -8 dbm using 6 db gain reduction in front end datarate offset tolerance 12 0.2 % % with carrier sense detection enabled and assuming 4 byte preamble with carrier sense detection disabled spurious emissions 1 - 13 ghz (vco leakage at 3.5 ghz) 30 mhz to 1 ghz -56 < -57 dbm dbm radiated emissions measured according to etsi en 300 220, f c = 8 69.5 mhz 1 all rx measurements made at the antenna connector, to a bit error rate limit of 1%
CC1125 swrs120a C revised march 2012 page 7 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. r x performance in 950 mhz band (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition -120 dbm 1.2 kbps, dev=4 khz chf=10 khz 2 -107 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz sensitivity note: sensitivity can be improved if the tx and rx matching networks are separated. -100 dbm 200 kbps, dev=83 khz (outer symbols), chf=200 khz, 4gfsk 3 51 db 12.5 khz (adjacent channel) 52 db 25 khz (alternate channel) 73 db 1 mhz 76 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 81 db 10 mhz 43 db 200 khz (adjacent channel) 51 db 400 khz (alternate channel) 62 db 1 mhz 65 db 2 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode) 71 db 10 mhz 37 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) 55 db 1 mhz 58 db 2 mhz blocking and selectivity 200 kbps 4gfsk, 83 khz deviation (outer symbols), 200 khz channel filter, zero if 64 db 10 mhz 2 dev is short for deviation, chf is short for channel filter bandwidth 3 bt=0.5 is used in all gfsk measurements
CC1125 swrs120a C revised march 2012 page 8 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. r x performance in 868/915 mhz bands (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition -129 dbm 300 bps, dev=1 khz chf=3.8 khz f xosc = 40 mhz -123 dbm 1.2 kbps, dev=4 khz chf=10 khz -114 dbm 4.8 kbps ook -110 dbm 38.4 kbps, dev=50 khz chf=100 khz -110 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz sensitivity -103 dbm 200 kbps, dev=83 khz (outer symbols), chf=200 khz, 4gfsk 62 db 6.25 khz (adjacent channel) 63 db + 12.5 khz (alternate channel) 83 db 1 mhz 87 db 2 mhz blocking and selectivity 0.3 kbps 2fsk, 6.25 khz channel separation, 1 khz deviation, 3.8 khz channel filter f xosc = 40 mhz using tcxo 91 db 10 mhz 58 db 12.5 khz (adjacent channel) 58 db 25 khz (alternate channel) 78 db 1 mhz 82 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter f xosc = 40 mhz using tcxo 86 db 10 mhz 58 db 25 khz (adjacent channel) 77 db 1 mhz 106 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 25 khz channel separation, 4 khz deviation, 16 khz channel filter f xosc = 40 mhz using tcxo u sing external saw filter for compliance with etsi category 1 101 db 10 mhz 42 db + 100 khz (adjacent channel) 43 db 200 khz (alternate channel) 62 db 1 mhz 66 db 2 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 74 db 10 mhz 43 db 200 khz (adjacent channel) 50 db 400 khz (alternate channel) 61 db 1 mhz 65 db 2 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode) 74 db 10 mhz
CC1125 swrs120a C revised march 2012 page 9 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. parameter min typ max unit condition 36 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) 55 db 1 mhz 59 db 2 mhz blocking and selectivity 200 kbps 4gfsk, 83 khz deviation (outer symbols), 200 khz channel filter, zero if 67 db 10 mhz image rejection (image compensation enabled) f xosc = 40 mhz using tcxo 58 db 1.2 kbps, 12.5 khz channel separation, fsk, image at -125 khz rx performance in 434 mhz band (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition -129 dbm 300 bps, dev=1 khz chf=3.8 khz f xosc = 40 mhz -123 dbm 1.2 kbps, dev=4 khz chf=10 khz -109 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz sensitivity -116 dbm 1.2 kbps, dev=20 khz chf=50 khz 65 db + 6.25 khz (adjacent channel) 66 db + 12.5 khz (alternate channel) 86 db 1 mhz 90 db 2 mhz blocking and selectivity 0.3 kbps 2fsk, 6.25 khz channel separation, 1 khz deviation, 3.8 khz channel filter f xosc = 40 mhz using tcxo 95 db 10 mhz 60 db 12.5 khz (adjacent channel) 61 db 25 khz (alternate channel) 80 db 1 mhz 85 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter f xosc = 40 mhz using tcxo 91 db 10 mhz 47 db + 100 khz (adjacent channel) 50 db 200 khz (alternate channel) 67 db 1 mhz 71 db 2 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 78 db 10 mhz
CC1125 swrs120a C revised march 2012 page 10 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. r x performance in 170 mhz band (high performance mode) t a = 25c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition -129 dbm 300 bps, dev=1 khz chf=3.8 khz f xosc = 40 mhz sensitivity -123 dbm 1.2 kbps, dev=4 khz chf=10 khz 67 db 6.25 khz (adjacent channel) 67 db + 12.5 khz (alternate channel) 88 db 1 mhz 101 db - 2 mhz blocking and selectivity 0.3 kbps 2fsk, 6.25 khz channel separation, 1 khz deviation, 3.8 khz channel filter f xosc = 40 mhz using tcxo 104 db 10 mhz 63 db 12.5 khz (adjacent channel) 65 db 25 khz (alternate channel) 82 db 1 mhz 86 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter f xosc = 40 mhz using tcxo 93 db - 10 mhz spurious response rejection 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 70 db image rejection (image compensation enabled) 66 db 1.2 kbps, 12.5 khz channel separation, fsk, image at -125 khz
CC1125 swrs120a C revised march 2012 page 11 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. r x performance in low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition -111 dbm 1.2 kbps, dev=4 khz chf=10 khz -99 dbm 38.4 kbps, dev=50 khz chf=100 khz sensitivity -99 dbm 50 kbps 2gfsk, dev=25 khz, chf=100 khz 46 db 12.5 khz (adjacent channel) 46 db 25 khz (alternate channel) 73 db 1 mhz 78 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 12.5 khz channel separation, 4 khz deviation, 10 khz channel filter 79 db 10 mhz 43 db 50 khz (adjacent channel) 45 db + 100 khz (alternate channel) 71 db 1 mhz 74 db 2 mhz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 75 db 10 mhz 37 db + 100 khz (adjacent channel) 43 db + 200 khz (alternate channel) 58 db 1 mhz 62 db 2 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 64 db + 10 mhz 43 db + 200 khz (adjacent channel) 52 db + 400 khz (alternate channel) 60 db 1 mhz 64 db 2 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode) 65 db 10 mhz saturation +10 dbm
CC1125 swrs120a C revised march 2012 page 12 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 .9 transmit parameters t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition +12 at 950 mhz +14 +15 at 915 mhz at 915 mhz with vdd = 3.6 v +15 +16 at 868 mhz at 868 mhz with vdd = 3.6 v +15 +16 at 433 mhz at 433 mhz with vdd = 3.6 v max output power +15 +16 at 170 mhz at 170 mhz with vdd = 3.6 v min output power -11 -40 dbm dbm within fine step size range within coarse step size range output power step size 0.4 db within fine step size range -75 dbc 4-gfsk 9.6 kbps in 12.5 khz channel, measured in 100 hz bandwidth at 434 mhz (fcc part 90 mask d compliant) -58 dbc 4-gfsk 9.6 kbps in 12.5 khz channel, measured in 8.75 khz bandwidth (etsi 300 220 compliant) adjacent channel power -61 dbc 2-gfsk 2.4 kbps in 12.5 khz channel, 1.2 khz deviation spurious emissions (not including harmonics) < -60 dbm harmonics 2 nd harm, 170 mhz 3 rd harm, 170 mhz 2 nd harm, 433 mhz 3 rd harm, 433 mhz 2 nd harm, 450 mhz 3 rd harm, 450 mhz 2 nd harm, 868 mhz 3 rd harm, 868 mhz 2 nd harm, 915 mhz 3 rd harm, 915 mhz 4 th harm, 915 mhz 2 nd harm, 950 mhz 3 rd harm, 950 mhz - 39 -58 -56 -51 -60 -45 -40 -42 56 52 60 -58 -42 dbm dbm dbm dbm dbm dbm dbm dbm dbuv/m dbuv/m dbuv/m dbm dbm transmission at +14 dbm (or maximum allowed in applicable band where this is less than +14dbm) using ti reference design radiated emissions measured according to arib t-96 in 950 mhz band, etsi en 300-220 in 170, 433 and 868 mhz bands and fcc part 15.247 in 450 and 915 mhz band fourth harmonic in 915 mhz band will require extra filtering to meet fcc requirements if transmitting in long intervals (>50 ms periods)
CC1125 swrs120a C revised march 2012 page 13 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 .10 pll parameters high performance mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 40 mhz using tcxo if nothing else stated parameter min typ max unit condition -100 dbc/hz 10 khz offset -103 dbc/hz 100 khz offset phase noise in 950 mhz band f xosc = 32 mhz -123 dbc/hz 1 mhz offset -101 dbc/hz 10 khz offset -102 dbc/hz 100 khz offset phase noise in 868/915 mhz bands -124 dbc/hz 1 mhz offset -107 dbc/hz 10 khz offset -110 dbc/hz 100 khz offset phase noise in 433 mhz band -130 dbc/hz 1 mhz offset -115 dbc/hz 10 khz offset -115 dbc/hz 100 khz offset phase noise in 170 mhz band -135 dbc/hz 1 mhz offset low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition -90 dbc/hz 10 khz offset -92 dbc/hz 100 khz offset phase noise in 950 mhz band -124 dbc/hz 1 mhz offset -95 dbc/hz 10 khz offset -95 dbc/hz 100 khz offset phase noise in 868/915 mhz bands -124 dbc/hz 1 mhz offset -98 dbc/hz 10 khz offset -102 dbc/hz 100 khz offset phase noise in 433 mhz band -129 dbc/hz 1 mhz offset -106 dbc/hz 10 khz offset -110 dbc/hz 100 khz offset phase noise in 170 mhz band -136 dbc/hz 1 mhz offset
CC1125 swrs120a C revised march 2012 page 14 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 .11 wake-up and timing t a = 25c, vdd = 3.0 v, f c = 869.5 mhz, f xosc = 32 mhz if nothing else stated parameter min typ max unit condition powerdown to idle 0.4 ms depends on crystal 166 s calibration disabled idle to rx/tx 461 s calibration enabled rx/tx turnaround 50 s 296 s calibrate when leaving rx/tx enabled rx/tx to idle time 0 s calibrate when leaving rx/tx disabled frequency synthesizer calibration 0.4 ms when using scal strobe minimum required number of preamble bytes 0.5 bytes required for rf front end gain settling only. digital demodulation does not require preamble for settling 4.6 ms 12.5 khz channels time from start rx until valid rssi including gain settling (function of channel bandwidth. programmable for trade-off between speed and accuracy) 0.3 ms 200 khz channels 1.12 high speed crystal oscillator t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition crystal frequency 32 44 mhz note: it is recommended that the crystal frequency is chosen so that the rf channel(s) are >1 mhz away from multiples of xosc in tx and xosc/2 in rx load capacitance (c l ) 10 pf esr <50 start-up time 0.4 ms depends on crystal 1.13 high speed clock input (tcxo) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 44 mhz clock input amplitude (peak-to-peak) >0.8 v should not exceed supply voltage
CC1125 swrs120a C revised march 2012 page 15 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 1 .14 32 khz clock input t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock frequency 32 khz 32 khz clock input pin input high voltage 0.8vdd v 32 khz clock input pin input low voltage 0.2vdd v 1.15 32 khz rc oscillator t a = 25c, vdd = 3.0 v if nothing else stated. parameter min typ max unit condition frequency 32 khz after calibration frequency accuracy after calibration 0.1 % relative to frequency reference (i.e. 32 mhz crystal or tcxo) initial calibration time 1.6 ms 1.16 i/o and reset t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition logic input high voltage logic input low voltage 0.8vdd 0.2vdd v v logic output high voltage logic output low voltage 0.8vdd 0. 2vdd v v at 4 ma output load or less power-on reset threshold 1.3 v voltage on dvdd pin
CC1125 swrs120a C revised march 2012 page 16 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 2 typical performance curves t a = 25c, vdd = 3.0 v, f xosc = 32 mhz if nothing else stated sensitivity vs temperature 1.2kbps, 4khz deviation, 10khz ch. filter bw -125 -124 -123 -122 -121 -120 -40 0 40 80 temperature (oc) s ensitivity (db m ) sync word sensitivity vs sync word detect threshold 1.2kbps, 4khz deviation, 10khz ch. filter bw -130 -128 -126 -124 -122 -120 -118 -116 -114 3 5 7 9 11 13 15 17 sync word detect threshold s ensitivity (db m ) sensitivity vs voltage 1.2kbps, 4khz deviation, 10khz ch. filter bw -124 -123 -122 -121 -120 2 2.5 3 3.5 supply voltage (v) s ensitivity (db m ) rx current vs input level 1.2kbps, 4khz deviation, 10khz ch. filter bw 20.8 21.2 21.6 22 22.4 22.8 23.2 -130 -80 -30 20 input level (dbm) r x c urrent (m a ) selectivity vs offset frequency (25 khz channel spacing) 1.2 kbps, 4 khz deviation, 16 khz ch. filter bw wanted channel at 869.3 mhz (-104 dbm) 0 10 20 30 40 50 60 70 80 90 860 862 864 866 868 870 872 874 876 878 frequency (mhz) selectivity (db) selectivity vs offset frequency (25 khz channel spacing) 1.2 kbps, 4 khz deviation, 16 khz ch. filter bw wanted channel at 869.3 mhz (-104 dbm) 0 10 20 30 40 50 60 70 80 90 868.6 868.8 869 869.2 869.4 869.6 869.8 870 frequency (mhz) selectivity (db)
CC1125 swrs120 C revised march 2012 page 17 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. output power at 868mhz vs pa power setting -50 - 40 -30 -20 -10 0 10 20 7f 7 b 77 7 3 6f 6b 67 63 5 f 5b 5 7 5 3 4 f 4b 4 7 4 3 pa power setting o utput power (dbm ) rssi vs input level 1.2kbps, 4khz deviation, 10khz ch. filter bw -40 -20 0 20 40 60 80 100 -150 -100 -50 0 input level (dbm) r s s i output power vs voltage max setting, 170 mhz 6 8 10 12 14 16 18 2 2.5 3 3.5 supply voltage (v) o u tp u t p o w e r (d b m ) output power vs temperature max setting, 170 mhz, 3.6v 15 15.5 16 16.5 17 -40 0 40 80 temperature (oc) o utput p ow er (db m ) tx current at 868mhz vs pa power setting 0 1 0 20 30 40 50 60 7 f 7b 7 7 73 6 f 6 b 6 7 6 3 5f 5 b 57 5 3 4f 4b 4 7 43 pa power setting tx c urrent (m a ) automatic image cancellation wanted channel at 869.3 mhz (-104 dbm), image at 869.17 mhz 0 10 20 30 40 50 60 70 869.05 869.1 869.15 869.2 869.25 869.3 869.35 frequency (mhz) selectivity (db) iqic enabled iqic disabled
CC1125 swrs120a C revised march 2012 page 18 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. gpio output low voltage vs current being sinked 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 current (ma) gpio output low voltage (mv) gpio output high voltage vs current being sourced 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0 5 10 15 20 25 30 35 current (ma) gpio output high voltage (v)
CC1125 swrs120a C revised march 2012 page 19 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 3 pin configuration the CC1125 pin-out is shown in the table below. pin # pin name type / direction description 1 vdd_guard power 2.0 - 3.6 v vdd 2 reset_n digital input asynchronous, active-low digital reset 3 gpio3 digital input/output general purpose io 4 gpio2 digital input/output general purpose io 5 dvdd power 2.0 - 3.6 vdd to internal digital regulator 6 dcpl power digital regulator output to external decoupling capacitor 7 si digital input serial data in 8 sclk digital input serial data clock 9 so(gpio1) digital input/output serial data out (general purpose io) 10 gpio0 digital input/output general purpose io 11 cs_n digital input active-low chip-select 12 dvdd power 2.0 - 3.6 v vdd 13 avdd_if power 2.0 - 3.6 v vdd 14 rbias analog external high precision r 15 avdd_rf power 2.0 - 3.6 v vdd 16 n.c. not connected 17 pa analog single-ended tx output 18 trx_sw analog tx/rx switch 19 lna_p analog differential rx input 20 lna_n analog differential rx input 21 dcpl_vco power pin for external decoupling of vco supply regulator 22 avdd_synth1 power 2.0 - 3.6 v vdd 23 lpf0 analog external loopfilter components 24 lpf1 analog external loopfilter components 25 avdd_pfd_chp power 2.0 - 3.6 v vdd 26 dcpl_pfd_chp power pin for external decoupling of pfd and chp regulator 27 avdd_synth2 power 2.0 - 3.6 v vdd 28 avdd_xosc power 2.0 - 3.6 v vdd 29 dcpl_xosc power pin for external decoupling of xosc supply regulator 30 xosc_q1 analog crystal oscillator pin 1 (must be grounded if a tcxo or other external clock connected to ext_xosc is used) 31 xosc_q2 analog crystal oscillator pin 2 (must be left floating if a tcxo or other external clock connected to ext_xosc is used) 32 ext_xosc digital input pin for external xosc input (must be grounded if a regular xosc connected to xosc_q1 and xosc_q2 is used) - gnd ground pad the ground pad must be connected to a solid ground plane
CC1125 swrs120a C revised march 2012 page 20 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 4 block diagram a system block diagram of CC1125 is shown figure 4.1. figure 4.1 : system block diagram 4.1 frequency synthesizer at the heart of CC1125 there is a fully integrated, fractional-n, ultra high performance frequency s ynthesizer. the frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking performance. the system is designed to comply with the most stringent regulatory spectral masks at maximum transmit power. either a crystal can be connected to xosc_q1 and xosc_q2, or a tcxo can be connected to the ext_xosc input. the oscillator generates the reference frequency for the synthesizer, as well as clocks for the adc and the digital part. to reduce system cost, CC1125 has high accuracy f requency estimation and compensation registers to measure and compensate for crystal inaccuracies, enabling the use of lower cost crystals. if a tcxo is used, the CC1125 will a utomatically turn the tcxo on and off when needed to support low power modes and wake-on- radio operation. 4.2 receiver CC1125 features a highly flexible receiver. the received rf signal is amplified by the low-noise a mplifier (lna) and down-converted in quadrature (i and q) to the intermediate frequency (if). at if, the i/q signals are digitized by the high dynamic range adcs. an advanced automatic gain control (agc) unit adjusts the front end gain, and enables the CC1125 to receive both strong and weak signals, even in the presence of strong interferers. high a ttenuation channel and data filtering enable reception with strong neighbor channel interferers. the i/q signal is converted to a phase / magnitude signal to support both fsk and ook modulation schemes. a sophisticated pattern recognition algorithm locks onto the synchronization word without need for preamble settling bytes. receiver settling time is therefore reduced to the settling time of the
CC1125 swrs120a C revised march 2012 page 21 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. a gc, typically 4 bits. the advanced pattern recognition also greatly reduces the problem of false sync triggering on noise, further reducing power consumption and improving sensitivity and reliability. the pattern recognition logic can also be used as a high performance preamble detector to reliably detect a valid preamble in the channel. a novel i/q compensation algorithm removes any problem of i/q mismatch and hence avoids time consuming and costly i/q / image calibration steps in production or in the field. 4.3 transmitter the CC1125 transmitter is based on direct synthesis of the rf frequency (in-loop modulation). to a chieve effective spectrum usage, CC1125 has extensive data filtering and shaping in tx to support h igh throughput data communication in narrowband channels. the modulator also controls power ramping to remove issues such as spectral splattering when driving external high power rf amplifiers. 4.4 radio control and user interface the CC1125 digital control system is built around marc (main radio control) implemented using a n internal high performance 16 bit ultra low power processor. marc handles power modes, radio sequencing and protocol timing. a 4-wire spi serial interface is used for configuration and data buffer access. the digital baseband includes support for channel configuration, packet handling, and data buffering. the host mcu can stay in power down until a valid rf packet has been received, and then burst read the data, greatly reducing the power consumption and computing power required from the host mcu. the CC1125 radio control and user interface is based on the widely used cc1101 transceiver to e nable easy sw transition between the two platforms. the command strobes and the main radio states are the same for the two platforms. for legacy formats CC1125 also has support for two serial modes. in synchronous serial mode CC1125 performs bit synchronization and provides the mcu with a bit clock with associated data. in t ransparent mode CC1125 outputs the digital baseband signal using a digital interpolation filter to e liminate jitter introduced by digital filtering and demodulation. 4.5 enhanced wake-on-radio (ewor) ewor, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from the mcu. the CC1125 will enter rx, listen and return to sleep if a valid rf packet i s not received. the sleep interval and duty cycle can be configured to make a trade-off between network latency and power consumption. incoming messages are time-stamped to simplify timer re-synchronization. the ewor timer runs off an ultra low power 32 khz rc oscillator. to improve timing accuracy, the rc oscillator can be automatically calibrated to the rf crystal in configurable intervals. 4.6 sniff mode the CC1125 supports very quick start up times, and requires very few preamble bits. sniff mode u ses this to dramatically reduce the current consumption while the receiver is waiting for data. since the CC1125 is able to wake up and settle much faster than the length of most preambles, it is n ot required to be in rx continuously while waiting for a packet to arrive. instead, the enhanced wake-on-radio feature can be used to put the device into sleep periodically. by setting an appropriate sleep time, the CC1125 will be able to wake up and receive the packet when it arrives w ith no performance loss. this removes the need for accurate timing synchronization between transmitter and receiver, and allows the user to trade off current consumption between the transmitter and receiver.
CC1125 swrs120a C revised march 2012 page 22 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 4 .7 antenna diversity antenna diversity can increase performance in a multi-path environment. an external antenna switch is required. the switch can be automatically controlled by CC1125 using one of the gpio p ins (also support for differential output control signal typically used in rf switches). if antenna diversity is enabled, the gpio will alternate between states until a valid rf input signal is detected. an optional acknowledge packet can be transmitted without changing gpio state. an incoming rf signal can be validated by received signal strength, by using the automatic preamble detector, or a combination of the two. using the preamble detector will make a more robust system and avoid the need to set a defined signal strength threshold, as this threshold will set the sensitivity limit of the system.
CC1125 swrs120a C revised march 2012 page 23 of 23 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. 5 typical application circuit very few external components are required for the operation of CC1125 . a typical application circuit i s shown below. note that it does not show how the board layout should be done, which will greatly influence the rf performance of CC1125 . t his section is meant as an introduction only. note that decoupling capacitors for power pins are not shown in the figure below. vdd ext_vdd in o ut tps799xx optional voltage regulator for supply noise isolation (optional control pin f rom CC1125) avdd_pfd_chp xosc_q2 xosc_q1 dcpl_pfd_chp avdd_synth2 dcpl_xosc avdd_xosc ext_xosc reset_n gpio3 gpio2 dvdd vdd_guard dcpl si sclk cs_n so (gpio1) dvdd rbias avdd_if avdd_rf n.c. gpio0 lna_p lna_n dcpl_vco avdd_synth1 pa trx_sw lpf0 lpf1 vdd vdd vdd vdd vdd CC1125 s 7 9 x c 1 2 5 c9 cx cc cx o c7 cs c1 xx xc xx x9 x7 co c5 c2 x5 xo 9x 9c 9x x2 x1 xs vdd 40 mhz c rystal optional x osc/ tcxo mcu connection spi interface and optional gpio pins vdd vdd vdd vdd figure 5.1 : typical application circuit
package option addendum www.ti.com 31-mar-2012 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ ball finish msl peak temp (3) samples (requires login) CC1125rhmr active qfn rhm 32 3000 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr CC1125rhmt active qfn rhm 32 250 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. -- the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.



important notice texas instruments incorporated and its subsidiaries (ti) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to ti s terms and conditions of sale supplied at the time of order acknowledgment. ti warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with ti s standard warranty. testing and other quality control techniques are used to the extent ti deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ti assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ti components. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. ti does not warrant or represent that any license, either express or implied, is granted under any ti patent right, copyright, mask work right, or other ti intellectual property right relating to any combination, machine, or process in which ti products or services are used. information published by ti regarding third-party products or services does not constitute a license from ti to use such products or services or a warranty or endorsement thereof. use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from ti under the patents or other intellectual property of ti. reproduction of ti information in ti data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alteration is an unfair and deceptive business practice. ti is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ti products or services with statements different from or beyond the parameters stated by ti for that product or service voids all express and any implied warranties for the associated ti product or service and is an unfair and deceptive business practice. ti is not responsible or liable for any such statements. ti products are not authorized for use in safety-critical applications (such as life support) where a failure of the ti product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of ti products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by ti. further, buyers must fully indemnify ti and its representatives against any damages arising out of the use of ti products in such safety-critical applications. ti products are neither designed nor intended for use in military/aerospace applications or environments unless the ti products are specifically designated by ti as military-grade or " enhanced plastic. " only products designated by ti as military-grade meet military specifications. buyers acknowledge and agree that any such use of ti products which ti has not designated as military-grade is solely at the buyer ' s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ti products are neither designed nor intended for use in automotive applications or environments unless the specific ti products are designated by ti as compliant with iso/ts 16949 requirements. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ti will not be responsible for any failure to meet such requirements. following are urls where you can obtain information on other texas instruments products and application solutions: products applications audio www.ti.com/audio automotive and transportation www.ti.com/automotive amplifiers amplifier.ti.com communications and telecom www.ti.com/communications data converters dataconverter.ti.com computers and peripherals www.ti.com/computers dlp ? products www.dlp.com consumer electronics www.ti.com/consumer-apps dsp dsp.ti.com energy and lighting www.ti.com/energy clocks and timers www.ti.com/clocks industrial www.ti.com/industrial interface interface.ti.com medical www.ti.com/medical logic logic.ti.com security www.ti.com/security power mgmt power.ti.com space, avionics and defense www.ti.com/space-avionics-defense microcontrollers microcontroller.ti.com video and imaging www.ti.com/video rfid www.ti-rfid.com omap mobile processors www.ti.com/omap wireless connectivity www.ti.com/wirelessconnectivity ti e2e community home page e2e.ti.com mailing address: texas instruments, post office box 655303, dallas, texas 75265 copyright ? 2012, texas instruments incorporated


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